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PD - 97078
PDP SWITCH
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low Q G for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability
IRFB4229PBF
Key Parameters
250 300 38 91 175
D
VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100C TJ max
D
V V m: A C
G
G D
S
S
TO-220AB
D S
G
Gate
Drain
Source
Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25C ID @ TC = 100C IDM IRP @ TC = 100C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N
Max.
30 46 33 180 91 330 190 2.2 -40 to + 175
Units
V A
c
Repetitive Peak Current
g
W W/C C
Thermal Resistance
RJC RCS RJA Junction-to-Case
f
Parameter
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
f
Typ. --- 0.50 ---
Max. 0.45 --- 62
Units C/W
Notes through are on page 8
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04/12/06
IRFB4229PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse
Min.
250 --- --- 3.0 --- --- --- --- --- 83 --- --- 100 --- ---
Typ. Max. Units
--- 210 38 --- -14 --- --- --- --- --- 72 26 --- 790 1390 4560 390 100 290 4.5 7.5 --- --- 46 5.0 --- 20 1.0 100 -100 --- 110 --- --- --- --- --- --- --- --- --- nH --- pF ns J S nC V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 26A
e
V mV/C A mA nA
VDS = VGS, ID = 250A VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 26A VDD = 125V, ID = 26A, VGS = 10Ve VDD = 200V, VGS = 15V, RG= 4.7 L = 220nH, C= 0.3F, VGS = 15V VDS = 200V, RG= 4.7, TJ = 25C L = 220nH, C= 0.3F, VGS = 15V VDS = 200V, RG= 4.7, TJ = 100C VGS = 0V VDS = 25V = 1.0MHz, VGS = 0V, VDS = 0V to 200V Between lead, 6mm (0.25in.) from package and center of die contact
G S D
Ciss Coss Crss Coss eff. LD LS
Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
--- --- --- --- --- ---
Avalanche Characteristics
Parameter Typ. Max. Units mJ mJ V A
EAS EAR VDS(Avalanche) IAS
Single Pulse Avalanche Energyd Repetitive Avalanche Energy Avalanche CurrentAd
--- --- 300 ---
130 33 --- 26
Repetitive Avalanche VoltageA
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current (Body Diode) ISM VSD trr Qrr Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- 190 840 --- ---
Min.
---
Typ. Max. Units
--- 46 180 1.3 290 1260 V ns nC A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 26A, VGS = 0V di/dt = 100A/s
e
TJ = 25C, IF = 26A, VDD = 50V
e
2
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IRFB4229PBF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V
TOP
100
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V
5.5V
10
10
5.5V
1 0.1 1
60s PULSE WIDTH Tj = 25C
1 10 100 0.1 1
60s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
Fig 2. Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current()
3.0 2.5 2.0 1.5 1.0 0.5 0.0
100
ID = 26A VGS = 10V
TJ = 175C
10
1
TJ = 25C
0.1
VDS = 25V 60s PULSE WIDTH
0.01 4.0 5.0 6.0 7.0 8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
1400
1600
Energy per pulse (J)
Energy per pulse (J)
1200
L = 220nH C = 0.3F 100C 25C
1200 1000 800 600 400 200
L = 220nH C = Variable 100C 25C
800
400
0 150 160 170 180 190 200
0 100 110 120 130 140 150 160 170
VDS, Drain-to -Source Voltage (V)
ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
Fig 6. Typical EPULSE vs. Drain Current
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IRFB4229PBF
2000
1000
L = 220nH
1600
ISD , Reverse Drain Current (A)
Energy per pulse (J)
C= 0.3F C= 0.2F C= 0.1F
100
1200
TJ = 175C
10
800
400
1
TJ = 25C VGS = 0V
0 25 50 75 100 125 150
0.1 0.2 0.4 0.6 0.8 1.0 1.2
Temperature (C)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature
7000 6000 5000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 8. Typical Source-Drain Diode Forward Voltage
20
VGS, Gate-to-Source Voltage (V)
ID= 26A VDS = 160V VDS = 100V VDS = 40V
16
C, Capacitance (pF)
Ciss
4000 3000 2000 1000
12
8
Coss
4
Crss
0 1 10 100 1000
0 0 20 40 60 80 100 120 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
50
1000
40
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 1sec 100sec 10sec
ID, Drain Current (A)
100
30
10
20
10
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 1000
0 25 50 75 100 125 150 175
TJ , Junction Temperature (C)
VDS , Drain-to-Source Voltage (V)
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Safe Operating Area
4
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IRFB4229PBF
( RDS (on), Drain-to -Source On Resistance )
EAS, Single Pulse Avalanche Energy (mJ)
0.40
600
ID = 26A
0.30
500
ID 7.4A 13A BOTTOM 26A
TOP
400
0.20
300
0.10
TJ = 125C TJ = 25C
200
100
0.00 5 6 7 8 9 10
0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 13. On-Resistance Vs. Gate Voltage
5.0
Fig 14. Maximum Avalanche Energy Vs. Temperature
140 120
VGS(th) Gate threshold Voltage (V)
4.5 4.0 3.5 3.0 2.5 2.0 1.5 -75 -50 -25 0 25 50 75 100 125 150 175
Repetitive Peak Current (A)
ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse
ID = 250A
100 80 60 40 20 0 25 50 75 100 125 150 175
TJ , Temperature ( C )
Case Temperature (C)
Fig 15. Threshold Voltage vs. Temperature
1
Fig 16. Typical Repetitive peak Current vs. Case temperature
Thermal Response ( ZthJC )
D = 0.50
0.1
0.20 0.10 0.05
J J 1 R1 R1 2 R2 R2 R3 R3 C 1 2 3 3
Ri (C/W)
(sec)
0.01
0.02 0.01
Ci= i/Ri Ci= i/Ri
0.080717 0.000052 0.209555 0.001021 0.159883 0.007276
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFB4229PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Id Vds
L VCC
0
Vgs
DUT 1K
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFB4229PBF
A
PULSE A
RG
DRIVER L
C
PULSE B
VCC
B
RG
Ipulse DUT
tST
Fig 21a. tst and EPULSE Test Circuit
Fig 21b. tst Test Waveforms
Fig 21c. EPULSE Test Waveforms
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IRFB4229PBF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
@Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A! DIAUC@A6TT@H7GAGDI@AA8A Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqAAArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
96U@A8P9@ @6SAA2A! X@@FA ( GDI@A8
TO-220AB packages are not recommended for Surface Mount Application.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.37mH, RG = 25, IAS = 26A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/2006
8
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